PHOTOLUMINESCENCE AND MICROSTRUCTURAL PROPERTIES OF HIGH-TEMPERATURE ANNEALED BURIED OXIDE SILICON-ON-INSULATOR

被引：17

作者：

DUNCAN, WM

CHANG, PH

MAO, BY

CHEN, CE

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 10期

关键词：

D O I：

10.1063/1.98863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：773 / 775

页数：3

共 13 条

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[3]

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[4] RECOMBINATION PROPERTIES OF OXYGEN-PRECIPITATED SILICON [J].

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[5]

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[6] COMPARISON OF 2 KINDS OF OXYGEN DONORS IN SILICON BY RESISTIVITY MEASUREMENTS [J].

KANAMORI, A ;

KANAMORI, M .

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[7]

Lam H. W., 1983, International Electron Devices Meeting 1983. Technical Digest, P348

[8] MICROSTRUCTURE OF HIGH-TEMPERATURE ANNEALED BURIED OXIDE SILICON-ON-INSULATOR [J].

MAO, BY ;

CHANG, PH ;

LAM, HW ;

SHEN, BW ;

KEENAN, JA .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :794-796

[9]

PINIZZOTTO RF, 1984, MATER RES SOC S P, V27, P265

[10]

SAUER R, 1983, LECT NOTES PHYS, V175, P120

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