REACTIVE ION ETCHING OF EPITAXIAL ZNSE THIN-FILMS

[1] ETCHING AND CATHODOLUMINESCENCE STUDIES OF ZNSE [J]. APPLIED PHYSICS LETTERS, 1988, 53 (08) : 690 - 691

[2] ELECTRON-BEAM PUMPED II-VI-LASERS [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 504 - 511

[3] JENKINS MW, 1986, SOLID STATE TECHNOL, V29, P175

[4] JUPINA MH, 1988, UNPUB TOPICAL M INTE

[5] GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING IN BORON-TRICHLORIDE ARGON MIXTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1599 - 1605

[6] SKROMME BJ, 1988, MATER RES SOC S P, V102, P577

[7] PSEUDOMORPHIC ZNSE/N-GAAS DOPED-CHANNEL FIELD-EFFECT TRANSISTORS BY INTERRUPTED MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (15) : 1249 - 1251

[8] TAMARGO MC, 1988, J VAC SCI TECHNOL B, V6, P74

[1] ETCHING AND CATHODOLUMINESCENCE STUDIES OF ZNSE [J]. APPLIED PHYSICS LETTERS, 1988, 53 (08) : 690 - 691

[2] ELECTRON-BEAM PUMPED II-VI-LASERS [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 504 - 511

[3] JENKINS MW, 1986, SOLID STATE TECHNOL, V29, P175

[4] JUPINA MH, 1988, UNPUB TOPICAL M INTE

[5] GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING IN BORON-TRICHLORIDE ARGON MIXTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1599 - 1605

[6] SKROMME BJ, 1988, MATER RES SOC S P, V102, P577

[7] PSEUDOMORPHIC ZNSE/N-GAAS DOPED-CHANNEL FIELD-EFFECT TRANSISTORS BY INTERRUPTED MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (15) : 1249 - 1251

[8] TAMARGO MC, 1988, J VAC SCI TECHNOL B, V6, P74