PSEUDOMORPHIC ZNSE/N-GAAS DOPED-CHANNEL FIELD-EFFECT TRANSISTORS BY INTERRUPTED MOLECULAR-BEAM EPITAXY

被引：54

作者：

STUDTMANN, GD

GUNSHOR, RL

KOLODZIEJSKI, LA

MELLOCH, MR

COOPER, JA

PIERRET, RF

MUNICH, DP

CHOI, C

OTSUKA, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 15期

关键词：

D O I：

10.1063/1.99171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1249 / 1251

页数：3

共 10 条

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[10] THE EFFECT OF LATTICE DEFORMATION ON OPTICAL-PROPERTIES AND LATTICE-PARAMETERS OF ZNSE GROWN ON (100)GAAS [J].

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