MICROWAVE-POWER GAAS MISFETS WITH UNDOPED ALGAAS AS AN INSULATOR

被引：23

作者：

KIM, B

TSERNG, HQ

SHIH, HD

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 11期

关键词：

D O I：

10.1109/EDL.1984.26000

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：494 / 495

页数：2

共 10 条

[1] INVESTIGATION OF HETEROJUNCTIONS FOR MIS DEVICES WITH OXYGEN-DOPED ALXGA1-XAS ON N-TYPE GAAS [J].

CASEY, HC ;

CHO, AY ;

LANG, DV ;

NICOLLIAN, EH ;

FOY, PW .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3484-3491

[2] 2-LAYER MICROWAVE FET STRUCTURE FOR IMPROVED CHARACTERISTICS [J].

DAS, MB ;

ESQUEDA, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) :757-761

[3] ENHANCEMENT-MODE METAL/(AL, GA)AS/GAAS BURIED-INTERFACE FIELD-EFFECT TRANSISTOR (BIFET) [J].

DRUMMOND, TJ ;

KOPP, W ;

ARNOLD, D ;

FISCHER, R ;

MORKOC, H ;

ERICKSON, LP ;

PALMBERG, PW .

ELECTRONICS LETTERS, 1983, 19 (23) :986-987

[4] POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET [J].

FRENSLEY, WR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :962-970

[5] A NEW TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR FABRICATED ON UNDOPED ALGAAS-GAAS HETEROSTRUCTURE [J].

KATAYAMA, Y ;

MORIOKA, M ;

SAWADA, Y ;

UEYANAGI, K ;

MISHIMA, T ;

ONO, Y ;

USAGAWA, T ;

SHIRAKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03) :L150-L152

[6] GAAS POWER FETS WITH SEMI-INSULATED GATES [J].

MACKSEY, HM ;

SHAW, DW ;

WISSEMAN, WR .

ELECTRONICS LETTERS, 1976, 12 (08) :192-193

[7] STATUS OF THE GAAS METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY [J].

MIMURA, T ;

FUKUTA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1147-1155

[8] CALCULATION OF MICROWAVE PERFORMANCE OF BUFFER LAYER GATE GAAS MESFET [J].

NAGASHIMA, A ;

UMEBACHI, S ;

KANO, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (05) :537-539

[9] SEMI-INSULATED GATE GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTOR [J].

PRUNIAUX, BR ;

NORTH, JC ;

PAYER, AV .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) :672-&

[10] CONTROL OF GATE-DRAIN AVALANCHE IN GAAS-MESFETS [J].

WEMPLE, SH ;

NIEHAUS, WC ;

COX, HM ;

DILORENZO, JV ;

SCHLOSSER, WO .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1013-1018

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