MOLECULAR-BEAM-EPITAXY GAAS REGROWTH WITH CLEAN INTERFACES BY ARSENIC PASSIVATION

被引：48

作者：

MILLER, DL

CHEN, RT

ELLIOTT, K

KOWALCZYK, SP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 06期

关键词：

D O I：

10.1063/1.334425

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1922 / 1927

页数：6

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