COMPARATIVE LEED STUDIES OF ALXGA1-XAS(110) AND GAAS(110)-AL(DELTA)

被引：17

作者：

KAHN, A ^{[1
]}

CARELLI, J ^{[1
]}

MILLER, DL ^{[1
]}

KOWALCZYK, SP ^{[1
]}

机构：

[1] ROCKWELL INT CORP,ELECTR RES CTR,THOUSAND OAKS,CA 91360

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期

关键词：

D O I：

10.1116/1.571785

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：380 / 383

页数：4

共 15 条

[1]

Arthttr J R, 1977, J VACUUM SCI TECHNOL, V14, P797

[2] LEED INTENSITY ANALYSIS OF THE STRUCTURE OF AL ON GAAS(110) [J].

KAHN, A ;

KANANI, D ;

CARELLI, J ;

YEH, JL ;

DUKE, CB ;

MEYER, RJ ;

PATON, A ;

BRILLSON, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :792-796

[3] ATOMIC GEOMETRY OF AL-GAAS INTERFACES - GAAS (110)-P(1X1)-AL(THETA), 0 LESS-THAN-OR-EQUAL TO THETA LESS-THAN-OR-EQUAL TO 8.5 MONOLAYERS [J].

KAHN, A ;

CARELLI, J ;

KANANI, D ;

DUKE, CB ;

PATON, A ;

BRILLSON, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :331-334

[4] THE GAAS(110)-OXYGEN INTERACTION - A LEED ANALYSIS .2. [J].

KAHN, A ;

KANANI, D ;

MARK, P .

SURFACE SCIENCE, 1980, 94 (2-3) :547-554

[5] ORDER-DISORDER EFFECTS IN GAAS(110)-OXYGEN INTERACTION - LEED-UPS ANALYSIS [J].

KAHN, A ;

KANANI, D ;

MARK, P ;

CHYE, PW ;

SU, CY ;

LINDAU, I ;

SPICER, WE .

SURFACE SCIENCE, 1979, 87 (02) :325-332

[6]

Kahn A., 1981, SOLID STATE COMMUN, V38, P1269

[7]

KANANI D, 1980, THESIS PRINCETON U

[8]

KANANI D, 1980, 4TH P INT C SOL SURF, V1, P711

[9] PROTECTION OF MOLECULAR-BEAM EPITAXY GROWN ALXGA1-XAS EPILAYERS DURING AMBIENT TRANSFER [J].

KOWALCZYK, SP ;

MILLER, DL ;

WALDROP, JR ;

NEWMAN, PG ;

GRANT, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02) :255-256

[10] LEED AND AES OF STOICHIOMETRIC AND ARSENIC-RICH GAAS(110) SURFACES PREPARED BY MOLECULAR-BEAM EPITAXY [J].

KUBLER, B ;

RANKE, W ;

JACOBI, K .

SURFACE SCIENCE, 1980, 92 (2-3) :519-527

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