ORDER-DISORDER EFFECTS IN GAAS(110)-OXYGEN INTERACTION - LEED-UPS ANALYSIS

被引：23

作者：

KAHN, A ^{[1
]}

KANANI, D ^{[1
]}

MARK, P ^{[1
]}

CHYE, PW ^{[1
]}

SU, CY ^{[1
]}

LINDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

SURFACE SCIENCE | 1979年 / 87卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0039-6028(79)90532-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cleaved GaAs(110) surfaces were exposed to oxygen (106 - 5 × 1010 L) and analysed by LEED and UPS. Very important changes in the electron diffraction occur at 108 L and the analysis of the LEED pattern shows a bulk-like diffraction superposed on a high background, implying that a thin layer (1-3 Å) disordered by the oxidation covers the GaAs lattice relaxted to its bulk structure. © 1979.

引用

页码：325 / 332

页数：8

共 14 条

[1] ATOMIC GEOMETRY OF CLEAVAGE SURFACES OF TETRAHEDRALLY COORDINATED COMPOUND SEMICONDUCTORS [J].