ATOMIC GEOMETRY OF AL-GAAS INTERFACES - GAAS (110)-P(1X1)-AL(THETA), 0 LESS-THAN-OR-EQUAL TO THETA LESS-THAN-OR-EQUAL TO 8.5 MONOLAYERS

被引：51

作者：

KAHN, A ^{[1
]}

CARELLI, J ^{[1
]}

KANANI, D ^{[1
]}

DUKE, CB ^{[1
]}

PATON, A ^{[1
]}

BRILLSON, L ^{[1
]}

机构：

[1] XEROX CORP,WEBSTER RES CTR,ROCHESTER,NY 14644

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：331 / 334

页数：4

共 14 条

[1] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS
BACHRACH, RZ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1340 - 1343
[2] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES
BRILLSON, LJ
BACHRACH, RZ
BAUER, RS
MCMENAMIN, J
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (06) : 397 - 401
[3] Duke C.B., 1974, ADV CHEM PHYS, V27, P1
[4] STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS
DUKE, CB
MEYER, RJ
PATON, A
MARK, P
KAHN, A
SO, E
YEH, JL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1252 - 1257
[5] INFLUENCE OF BOUNDARY-CONDITIONS AND OF ELECTRONIC AND VIBRATIONAL SURFACE PHENOMENA ON LOW-ENERGY-ELECTRON DIFFRACTION FROM LOW-INDEX FACES OF ALUMINUM
DUKE, CB
LIPARI, NO
LANDMAN, U
[J]. PHYSICAL REVIEW B, 1973, 8 (06): : 2454 - 2467
[6] DUKE CB, UNPUBLISHED
[7] STRUCTURAL AND ELECTRICAL-PROPERTIES OF EPITAXIAL METAL-FILMS GROWN ON ARGON ION BOMBARDED AND ANNEALED (001)INP
FARROW, RFC
CULLIS, AG
GRANT, AJ
PATTISON, JE
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 292 - 301
[8] LEED INTENSITY ANALYSIS OF THE STRUCTURE OF AL ON GAAS(110)
KAHN, A
KANANI, D
CARELLI, J
YEH, JL
DUKE, CB
MEYER, RJ
PATON, A
BRILLSON, L
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 792 - 796
[9] KAHN A, UNPUBLISHED
[10] KANANI D, 1980, 4TH P INT C SOL SURF, V1, P711