LEED INTENSITY ANALYSIS OF THE STRUCTURE OF AL ON GAAS(110)

被引：19

作者：

KAHN, A ^{[1
]}

KANANI, D ^{[1
]}

CARELLI, J ^{[1
]}

YEH, JL ^{[1
]}

DUKE, CB ^{[1
]}

MEYER, RJ ^{[1
]}

PATON, A ^{[1
]}

BRILLSON, L ^{[1
]}

机构：

[1] XEROX CORP,WEBSTER RES CTR,ROCHESTER,NY 14644

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.570949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：792 / 796

页数：5

共 22 条

[1] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS [J].

BACHRACH, RZ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1340-1343

[2]

BACHRACH RZ, 1978, 14TH P INT C PHYS SE

[3]

BARTON JJ, 1980, J VAC SCI TECHNOL, V17, P869

[4] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].

BRILLSON, LJ ;

BACHRACH, RZ ;

BAUER, RS ;

MCMENAMIN, J .

PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401

[5]

Duke C.B., 1974, DYNAMIC ASPECTS SURF, P99

[6] SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS - INSB(110) AND ITS COMPARISON WITH GAAS(110) AND ZNTE(110) [J].

DUKE, CB ;

MEYER, RJ ;

PATON, A ;

YEH, JL ;

TSANG, JC ;

KAHN, A ;

MARK, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :501-505

[7] INFLUENCE OF BOUNDARY-CONDITIONS AND OF ELECTRONIC AND VIBRATIONAL SURFACE PHENOMENA ON LOW-ENERGY-ELECTRON DIFFRACTION FROM LOW-INDEX FACES OF ALUMINUM [J].

DUKE, CB ;

LIPARI, NO ;

LANDMAN, U .

PHYSICAL REVIEW B, 1973, 8 (06) :2454-2467

[8]

DUKE CB, 1975, ADV CHEM PHYS, V27, P1

[9]

KAHN A, UNPUBLISHED

[10]

KANANI D, 1980, 4TH P INT C SOL SURF, V1, P711

← 1 2 3 →