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PHOTOIONIZATION CROSS-SECTION MEASUREMENTS OF DEEP LEVELS IN IRON DOPED GAAS
被引:9
作者
:
KITAHARA, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,JAPAN
FUJITSU LABS LTD,KAWASAKI,JAPAN
KITAHARA, K
[
1
]
NAKAI, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,JAPAN
FUJITSU LABS LTD,KAWASAKI,JAPAN
NAKAI, K
[
1
]
OZEKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,JAPAN
FUJITSU LABS LTD,KAWASAKI,JAPAN
OZEKI, M
[
1
]
SHIBATOMI, A
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,JAPAN
FUJITSU LABS LTD,KAWASAKI,JAPAN
SHIBATOMI, A
[
1
]
DAZAI, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,JAPAN
FUJITSU LABS LTD,KAWASAKI,JAPAN
DAZAI, K
[
1
]
机构
:
[1]
FUJITSU LABS LTD,KAWASAKI,JAPAN
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1976年
/ 15卷
/ 11期
关键词
:
D O I
:
10.1143/JJAP.15.2275
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:2275 / 2276
页数:2
相关论文
共 5 条
[1]
FISTUL VI, 1974, SOV PHYS SEMICOND+, V8, P311
[2]
SPECTRAL DISTRIBUTION OF PHOTOIONIZATION CROSS-SECTIONS BY PHOTOCONDUCTIVITY MEASUREMENTS
GRIMMEISS, HG
论文数:
0
引用数:
0
h-index:
0
机构:
LUND INST TECHNOL, DEPT SOLID STATE PHYS, BOX 725, S-220 07 LUND 7, SWEDEN
LUND INST TECHNOL, DEPT SOLID STATE PHYS, BOX 725, S-220 07 LUND 7, SWEDEN
GRIMMEISS, HG
LEDEBO, LA
论文数:
0
引用数:
0
h-index:
0
机构:
LUND INST TECHNOL, DEPT SOLID STATE PHYS, BOX 725, S-220 07 LUND 7, SWEDEN
LUND INST TECHNOL, DEPT SOLID STATE PHYS, BOX 725, S-220 07 LUND 7, SWEDEN
LEDEBO, LA
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(05)
: 2155
-
2162
[3]
HAISTY RW, 1964, 7TH P INT C PHYS SEM, P1161
[4]
ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS
Lucovsky, G.
论文数:
0
引用数:
0
h-index:
0
机构:
Philco Appl Res Lab, Blue Bell, PA USA
Philco Appl Res Lab, Blue Bell, PA USA
Lucovsky, G.
[J].
SOLID STATE COMMUNICATIONS,
1965,
3
(09)
: 299
-
302
[5]
STRACK H, 1967, T METALL SOC AIME, V239, P381
←
1
→
共 5 条
[1]
FISTUL VI, 1974, SOV PHYS SEMICOND+, V8, P311
[2]
SPECTRAL DISTRIBUTION OF PHOTOIONIZATION CROSS-SECTIONS BY PHOTOCONDUCTIVITY MEASUREMENTS
GRIMMEISS, HG
论文数:
0
引用数:
0
h-index:
0
机构:
LUND INST TECHNOL, DEPT SOLID STATE PHYS, BOX 725, S-220 07 LUND 7, SWEDEN
LUND INST TECHNOL, DEPT SOLID STATE PHYS, BOX 725, S-220 07 LUND 7, SWEDEN
GRIMMEISS, HG
LEDEBO, LA
论文数:
0
引用数:
0
h-index:
0
机构:
LUND INST TECHNOL, DEPT SOLID STATE PHYS, BOX 725, S-220 07 LUND 7, SWEDEN
LUND INST TECHNOL, DEPT SOLID STATE PHYS, BOX 725, S-220 07 LUND 7, SWEDEN
LEDEBO, LA
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(05)
: 2155
-
2162
[3]
HAISTY RW, 1964, 7TH P INT C PHYS SEM, P1161
[4]
ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS
Lucovsky, G.
论文数:
0
引用数:
0
h-index:
0
机构:
Philco Appl Res Lab, Blue Bell, PA USA
Philco Appl Res Lab, Blue Bell, PA USA
Lucovsky, G.
[J].
SOLID STATE COMMUNICATIONS,
1965,
3
(09)
: 299
-
302
[5]
STRACK H, 1967, T METALL SOC AIME, V239, P381
←
1
→