SPECTRAL DISTRIBUTION OF PHOTOIONIZATION CROSS-SECTIONS BY PHOTOCONDUCTIVITY MEASUREMENTS

被引:116
作者
GRIMMEISS, HG [1 ]
LEDEBO, LA [1 ]
机构
[1] LUND INST TECHNOL, DEPT SOLID STATE PHYS, BOX 725, S-220 07 LUND 7, SWEDEN
关键词
D O I
10.1063/1.321858
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:2155 / 2162
页数:8
相关论文
共 25 条
[1]  
BAXTER RD, 1963, J ELECTROCHEM SOC, V110, pC187
[2]   SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION [J].
BLEICHER, M ;
LANGE, E .
SOLID-STATE ELECTRONICS, 1973, 16 (03) :375-380
[3]   OPTICAL-PROPERTIES OF GOLD ACCEPTOR AND DONOR LEVELS IN SILICON [J].
BRAUN, S ;
GRIMMEISS, HG .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2658-2665
[4]  
Bube R.H., 1960, PHOTOCONDUCTIVITY SO
[5]  
BUBE RH, 1962, PHYS REV, V128, P2062, DOI 10.1103/PhysRev.128.2062
[7]   TEMPERATURE DEPENDENCE OF PHOTO-HALL EFFECTS IN HIGH-RESISTIVITY GALLIUM ARSENIDE .2. 2-CARRIER EFFECTS [J].
BUBE, RH ;
MACDONALD, HE .
PHYSICAL REVIEW, 1962, 128 (05) :2071-&
[8]   MICROWAVE OSCILLATIONS IN HIGH-RESISTIVITY GAAS [J].
DAY, GF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :88-+
[9]   HALL-EFFECT LEVELS PRODUCED IN TE-DOPED GAAS CRYSTALS BY CU DIFFUSION [J].
FULLER, CS ;
WOLFSTIRN, KB ;
ALLISON, HW .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2873-+
[10]   TRANSIENT PHENOMENA IN CAPACITANCE OF GAAS SCHOTTKY BARRIER DIODES [J].
FURUKAWA, Y ;
ISHIBASHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (09) :837-+