PREGROWTH TREATMENT DEPENDENCE OF SURFACE-MORPHOLOGY FOR GAAS GROWN ON EXACTLY ORIENTED (111)A SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：35

作者：

YAMAMOTO, T

INAI, M

TAKEBE, T

WATANABE, T

机构：

[1] A TR Optical and Radio Communications Research Laboratories, Kyoto, 619-02, Seika-cho, Soraku-gun

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.578783

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigate the dependence of growth layer surface morphology on surface treatment processes, i.e., etching, mounting, and loading wafers before molecular-beam epitaxial growth. The surface morphology of a GaAs growth layer on exactly oriented (111)A GaAs is found to be strongly dependent on stoichiometry and roughness of the surface before growth. Device-quality layers with a good surface morphology were obtained only on the exactly oriented (111)A GaAs wafers etched with NH4OH:H2O2:H2O (2:1:96) etchant, loaded into a growth chamber with little residual As4, and mounted without In. It is very important to use the NH4OH etchant (2:1:96) with (111)A GaAs, because it maintains the surface stoichiometry and smoothness.

引用

收藏

页码：631 / 636

页数：6

相关论文

共 19 条

[1] STABILITY OF (100) GAAS-SURFACES IN AQUEOUS-SOLUTIONS [J].

ASPNES, DE ;

STUDNA, AA .

APPLIED PHYSICS LETTERS, 1985, 46 (11) :1071-1073

[2] LATERAL P-N-JUNCTIONS ON GAAS(111)A SUBSTRATES PATTERNED WITH EQUILATERAL TRIANGLES [J].

FUJII, M ;

YAMAMOTO, T ;

SHIGETA, M ;

TAKEBE, T ;

KOBAYASHI, K ;

HIYAMIZU, S ;

FUJIMOTO, I .

SURFACE SCIENCE, 1992, 267 (1-3) :26-28

[3] OBSERVATION OF ROOM-TEMPERATURE BLUE SHIFT AND BISTABILITY IN A STRAINED INGAAS-GAAS (111) SELF-ELECTRO-OPTIC EFFECT DEVICE [J].

GOOSSEN, KW ;

CARIDI, EA ;

CHANG, TY ;

STARK, JB ;

MILLER, DAB ;

MORGAN, RA .

APPLIED PHYSICS LETTERS, 1990, 56 (08) :715-717

[4] REDUCTION IN THRESHOLD CURRENT-DENSITY OF QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON 0.5-DEGREES MISORIENTED (111)B SUBSTRATES [J].

HAYAKAWA, T ;

KONDO, M ;

SUYAMA, T ;

TAKAHASHI, K ;

YAMAMOTO, S ;

HIJIKATA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (04) :L302-L305

[5] COMPOSITIONAL MODULATION IN ALXGA1-XAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON THE (111) FACETS OF GROOVES IN A NONPLANAR SUBSTRATE [J].

HOENK, ME ;

NIEH, CW ;

CHEN, HZ ;

VAHALA, KJ .

APPLIED PHYSICS LETTERS, 1989, 55 (01) :53-55

[6] ELECTRICAL-PROPERTIES AND DOPANT INCORPORATION MECHANISMS OF SI DOPED GAAS AND (ALGA)AS GROWN ON (111)A GAAS-SURFACES BY MBE [J].

KADOYA, Y ;

SATO, A ;

KANO, H ;

SAKAKI, H .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :280-283

[7] SINGLE QUANTUM WIRE SEMICONDUCTOR-LASERS [J].

KAPON, E ;

SIMHONY, S ;

BHAT, R ;

HWANG, DM .

APPLIED PHYSICS LETTERS, 1989, 55 (26) :2715-2717

[8] ESTIMATION OF THE SURFACE-STATE DENSITY OF N-TYPE (111)A GAAS GROWN USING MOLECULAR-BEAM EPITAXY [J].

LOVELL, DR ;

TAKEBE, T ;

YAMAMOTO, T ;

INAI, M ;

KOBAYASHI, K ;

WATANABE, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (12B) :L1740-L1742

[9] TITANIUM GOLD SCHOTTKY CONTACTS ON P-TYPE GAAS GROWN ON (111)A AND (100) GAAS SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].

LOVELL, DR ;

YAMAMOTO, T ;

INAI, M ;

TAKEBE, T ;

KOBAYASHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (7B) :L924-L927

[10] ELECTRONIC-STRUCTURE OF [001]-GROWTH-AXIS AND [111]-GROWTH-AXIS SEMICONDUCTOR SUPERLATTICES [J].

MAILHIOT, C ;

SMITH, DL .

PHYSICAL REVIEW B, 1987, 35 (03) :1242-1259