EVOLUTION OF STRAIN RELAXATION IN COMPOSITIONALLY GRADED SI1-XGEX FILMS ON SI(001)

被引：28

作者：

LI, JH ^{[1
]}

KOPPENSTEINER, E ^{[1
]}

BAUER, G ^{[1
]}

HOHNISCH, M ^{[1
]}

HERZOG, HJ ^{[1
]}

SCHAFFLER, F ^{[1
]}

机构：

[1] DAIMLER BENZ AG,RES CTR,D-89081 ULM,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 02期

关键词：

D O I：

10.1063/1.114674

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-resolution x-ray reciprocal space mapping was employed to determine the in-depth strain distribution of Si1-xGex films with linear composition gradings between 4.2% and 15% Ge per μm, and thicknesses between 0.4 and 1.7 μm. The variation of grading and thickness parameters of the samples provides a complete picture of the overall relaxation behavior of linearly graded epilayers. The x-ray data show a top layer of grading-dependent residual strain whereas the lower parts of the films are completely and/or partly relaxed with respect to the Si substrate.© 1995 American Institute of Physics.

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页码：223 / 225

页数：3

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