AN INDUSTRIAL SINGLE-SLICE SI-MBE APPARATUS

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444

[2] FOLDED ACOUSTIC PHONONS IN SI-SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5928 - 5930

[3] THE N-CHANNEL SIGE/SI MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 633 - 638

[4] SILICON LAYERS GROWN BY DIFFERENTIAL MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : 2227 - 2231

[5] SECONDARY IMPLANTATION OF SB INTO SI MOLECULAR-BEAM EPITAXY LAYERS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (05) : 511 - 513

[6] KASPER E, IN PRESS SILICON MOL, pCH14

[7] LUY JF, 1985, ELECTROCHEMICAL SOC, V857, P236

[8] STRUCTURALLY INDUCED OPTICAL-TRANSITIONS IN GE-SI SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (07) : 729 - 732

[9] ENHANCEMENT-MODE AND DEPLETION-MODE PARA-CHANNEL GEXSI1-X MODULATION-DOPED FETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) : 308 - 310

[10] MODULATION DOPING IN GEXSI1-X/SI STRAINED LAYER HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1231 - 1233

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444

[2] FOLDED ACOUSTIC PHONONS IN SI-SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5928 - 5930

[3] THE N-CHANNEL SIGE/SI MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 633 - 638

[4] SILICON LAYERS GROWN BY DIFFERENTIAL MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : 2227 - 2231

[5] SECONDARY IMPLANTATION OF SB INTO SI MOLECULAR-BEAM EPITAXY LAYERS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (05) : 511 - 513

[6] KASPER E, IN PRESS SILICON MOL, pCH14

[7] LUY JF, 1985, ELECTROCHEMICAL SOC, V857, P236

[8] STRUCTURALLY INDUCED OPTICAL-TRANSITIONS IN GE-SI SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (07) : 729 - 732

[9] ENHANCEMENT-MODE AND DEPLETION-MODE PARA-CHANNEL GEXSI1-X MODULATION-DOPED FETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) : 308 - 310

[10] MODULATION DOPING IN GEXSI1-X/SI STRAINED LAYER HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1231 - 1233