SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS

被引：227

作者：

BERNHOLC, J

PANTELIDES, ST

机构：

来源：

PHYSICAL REVIEW B | 1978年 / 18卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.18.1780

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1780 / 1789

页数：10

共 55 条

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