LASER PULSED GAAS CATHODES FOR ELECTRON-MICROSCOPY

被引:7
作者
SANFORD, CA [1 ]
MACDONALD, NC [1 ]
机构
[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期
关键词
D O I
10.1116/1.584689
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1903 / 1907
页数:5
相关论文
共 11 条
[1]   INTERFACIAL BARRIER EFFECTS IN III-V PHOTOEMITTERS [J].
BELL, RL ;
JAMES, LW ;
ANTYPAS, GA ;
EDGECUMBE, J ;
MOON, RL .
APPLIED PHYSICS LETTERS, 1971, 19 (12) :513-+
[2]   PHOTOEMISSION FROM ACTIVATED GALLIUM-ARSENIDE .1. VERY-HIGH-RESOLUTION ENERGY-DISTRIBUTION CURVES [J].
DROUHIN, HJ ;
HERMANN, C ;
LAMPEL, G .
PHYSICAL REVIEW B, 1985, 31 (06) :3859-3871
[3]   EXPERIMENTAL EVIDENCE FOR OPTICAL POPULATION OF X MINIMA IN GAAS [J].
EDEN, RC ;
MOLL, JL ;
SPICER, WE .
PHYSICAL REVIEW LETTERS, 1967, 18 (15) :597-&
[4]   TRANSPORT PROPERTIES OF GAAS OBTAINED FROM PHOTOEMISSION MEASUREMENTS [J].
JAMES, LW ;
MOLL, JL .
PHYSICAL REVIEW, 1969, 183 (03) :740-&
[5]   NONCONTACT HIGH-SPEED WAVEFORM MEASUREMENTS WITH THE PICOSECOND PHOTOELECTRON SCANNING ELECTRON-MICROSCOPE [J].
MAY, PG ;
HALBOUT, JM ;
CHIU, GLT .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (02) :234-239
[6]   ELECTRON-OPTICAL CHARACTERISTICS OF NEGATIVE ELECTRON-AFFINITY CATHODES [J].
SANFORD, CA ;
MACDONALD, NC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :2005-2008
[7]   FEMTOSECOND HOT CARRIER ENERGY REDISTRIBUTION IN GAAS AND ALGAAS [J].
SCHOENLEIN, RW ;
LIN, WZ ;
BRORSON, SD ;
IPPEN, EP ;
FUJIMOTO, JG .
SOLID-STATE ELECTRONICS, 1988, 31 (3-4) :443-446
[8]   PN-SCHOTTKY HYBRID COLD-CATHODE DIODE [J].
STOLTE, CA ;
ARCHER, RJ .
APPLIED PHYSICS LETTERS, 1971, 19 (11) :497-&
[9]   CESIUM-GAAS SCHOTTKY BARRIER HEIGHT [J].
UEBBING, JJ ;
BELL, RL .
APPLIED PHYSICS LETTERS, 1967, 11 (11) :357-&
[10]  
UEBBING JJ, 1970, J APPL PHYS, V14, P4505