ROLE OF ARGON INVOLVED IN PLASMA-DEPOSITED AMORPHOUS SI-H FILMS

[1] USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM [J]. PHYSICAL REVIEW B, 1976, 13 (02): : 787 - 804

[2] IIZIMA S, 1979, 3RD P INT C SOL STAT

[3] KNIGHTS JC, 1978, 10TH P C SOL STAT DE, P101

[4] MATSUDA A, 1980, J NON-CRYST, V35

[5] PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING [J]. SOLID STATE COMMUNICATIONS, 1977, 23 (03) : 155 - 158

[6] MOUSTAKAS TD, UNPUBLISHED

[7] NEW DEVELOPMENT IN STUDY OF AMORPHOUS SILICON HYDROGEN ALLOYS - STORY OF O [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (21) : 1492 - 1495

[8] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196

[9] EFFECT OF ANNEALING ON THE OPTICAL-PROPERTIES OF PLASMA DEPOSITED AMORPHOUS HYDROGENATED SILICON [J]. SOLAR ENERGY MATERIALS, 1979, 1 (1-2): : 29 - 42

[1] USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM [J]. PHYSICAL REVIEW B, 1976, 13 (02): : 787 - 804

[2] IIZIMA S, 1979, 3RD P INT C SOL STAT

[3] KNIGHTS JC, 1978, 10TH P C SOL STAT DE, P101

[4] MATSUDA A, 1980, J NON-CRYST, V35

[5] PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING [J]. SOLID STATE COMMUNICATIONS, 1977, 23 (03) : 155 - 158

[6] MOUSTAKAS TD, UNPUBLISHED

[7] NEW DEVELOPMENT IN STUDY OF AMORPHOUS SILICON HYDROGEN ALLOYS - STORY OF O [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (21) : 1492 - 1495

[8] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196

[9] EFFECT OF ANNEALING ON THE OPTICAL-PROPERTIES OF PLASMA DEPOSITED AMORPHOUS HYDROGENATED SILICON [J]. SOLAR ENERGY MATERIALS, 1979, 1 (1-2): : 29 - 42