THEORY AND OPERATION OF SPACE-CHARGE-LIMITED TRANSISTORS WITH TRANSVERSE INJECTION

被引：3

作者：

MAGDO, S ^{[1
]}

机构：

[1] IBM CORP, SYST PROD DIV, E FISHKILL LAB, HOPEWELL JUNCTION, NY 12533 USA

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1973年 / 17卷 / 05期

关键词：

Compendex;

D O I：

10.1147/rd.175.0443

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

TRANSISTORS

引用

页码：443 / 458

页数：16

共 16 条

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BUGET, U ;

WRIGHT, GT .

SOLID-STATE ELECTRONICS, 1967, 10 (03) :199-&

[2] 3 MASK BIPOLAR INTEGRATED-CIRCUIT STRUCTURE [J].

GLINSKI, VJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) :182-&

[3]

GRAY PE, 1963, PHYSICAL ELECTRONICS

[4]

KENNEDY DP, 1970, AFCRL700078 US AIR F, P94

[5] CARRIER ACCUMULATION AND SPACE-CHARGE-LIMITED CURRENT FLOW IN FIELD-EFFECT TRANSISTORS [J].

KIM, C ;

YANG, ES .

SOLID-STATE ELECTRONICS, 1970, 13 (12) :1577-&

[6] SIMPLIFIED THEORY OF SPACE-CHARGE-LIMITED CURRENTS IN AN INSULATOR WITH TRAPS [J].

LAMPERT, MA .

PHYSICAL REVIEW, 1956, 103 (06) :1648-1656

[7]

MAGDO S, 1972, DEC IEEE INT EL DEV

[8]

Mott N. F., 1940, ELECTRONIC PROCESSES

[9] SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS [J].

ROSE, A .

PHYSICAL REVIEW, 1955, 97 (06) :1538-1544

[10]

RUPPEL W, 1959, RCA REV, V20, P702

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