DC DARK HALL MOBILITY MEASUREMENTS ON ANTHRACENE

被引：17

作者：

PETHIG, R

MORGAN, K

机构：

来源：

关键词：

D O I：

10.1038/214266a0

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：266 / &

共 6 条

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[2] CONDUCTIVITY INDUCED BY ELECTRON BOMBARDMENT IN ANTHRACENE
DELANY, JL
HIRSCH, J
[J]. SOLID STATE COMMUNICATIONS, 1966, 4 (03) : 107 - &
[3] DOBROVOLSKII VN, 1963, SOV PHYS-SOL STATE, V4, P2025
[4] TRANSPORT PROPERTIES OF ORGANIC SEMICONDUCTORS
FRIEDMAN, L
[J]. PHYSICAL REVIEW, 1964, 133 (6A): : 1668 - +
[5] CRYOSTAT FOR MEASURING THE ELECTRICAL PROPERTIES OF HIGH RESISTANCE SEMICONDUCTORS AT LOW TEMPERATURES
MITCHELL, WH
PUTLEY, EH
[J]. JOURNAL OF SCIENTIFIC INSTRUMENTS, 1959, 36 (03): : 134 - 136
[6] SPEAR WE, 1966, APR C EL PROC LOW MO