CRYOSTAT FOR MEASURING THE ELECTRICAL PROPERTIES OF HIGH RESISTANCE SEMICONDUCTORS AT LOW TEMPERATURES

被引：15

作者：

MITCHELL, WH

PUTLEY, EH

机构：

来源：

JOURNAL OF SCIENTIFIC INSTRUMENTS | 1959年 / 36卷 / 03期

关键词：

D O I：

10.1088/0950-7671/36/3/308

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：134 / 136

页数：3

共 7 条

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FRITZSCHE, H
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[2] HOARE, 1955, P PHYS SOC LONDON B, V68, P388
[3] THE LOW TEMPERATURE ELECTRICAL CONDUCTIVITY OF NORMAL-TYPE GERMANIUM
KOENIG, SH
GUNTHERMOHR, GR
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (04) : 268 - 283
[4] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON
MORIN, FJ
MAITA, JP
[J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35
[5] PALEVSKY H, 1946, REV SCI INSTRUM, V18, P298
[6] ELECTRICAL CONDUCTION IN P-TYPE INSB BETWEEN 100-DEGREES AND 2-DEGREES-K
PUTLEY, EH
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (469): : 128 - 131
[7] THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF SILICON
PUTLEY, EH
MITCHELL, WH
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (464): : 193 - 200