THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF SILICON

被引：108

作者：

PUTLEY, EH

MITCHELL, WH

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1958年 / 72卷 / 464期

关键词：

D O I：

10.1088/0370-1328/72/2/303

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：193 / 200

页数：8

共 8 条

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[2] STATISTICS AND GALVANOMAGNETIC EFFECTS IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES
LAX, B
MAVROIDES, JG
[J]. PHYSICAL REVIEW, 1955, 100 (06): : 1650 - 1657
[3] DETERMINATION OF THE IMPURITY CONCENTRATIONS IN A SEMICONDUCTOR FROM HALL COEFFICIENT MEASUREMENTS
LEE, PA
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1957, 8 (08): : 340 - 343
[4] DRIFT AND CONDUCTIVITY MOBILITY IN SILICON
LUDWIG, GW
WATTERS, RL
[J]. PHYSICAL REVIEW, 1956, 101 (06): : 1699 - 1701
[5] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON
MORIN, FJ
MAITA, JP
[J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35
[6] TRANSVERSE HALL AND MAGNETORESISTANCE EFFECTS IN P-TYPE GERMANIUM
WILLARDSON, RK
HARMAN, TC
BEER, AC
[J]. PHYSICAL REVIEW, 1954, 96 (06): : 1512 - 1518
[7] WILSON AH, 1953, THEORY METALS, P115
[8] WILSON JM, 1957, RESEARCH, V10, P166