DETERMINATION OF THE IMPURITY CONCENTRATIONS IN A SEMICONDUCTOR FROM HALL COEFFICIENT MEASUREMENTS

被引：21

作者：

LEE, PA

机构：

来源：

BRITISH JOURNAL OF APPLIED PHYSICS | 1957年 / 8卷 / 08期

关键词：

D O I：

10.1088/0508-3443/8/8/307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：340 / 343

页数：4

相关论文

共 7 条

[1] ABSORPTION SPECTRA OF IMPURITIES IN SILICON .1. GROUP-III ACCEPTORS
BURSTEIN, E
PICUS, G
HENVIS, B
WALLIS, R
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 65 - 74
[2] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM
DEBYE, PP
CONWELL, EM
[J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706
[3] EFFECTIVE MASSES OF HOLES IN SILICON
DEXTER, RN
LAX, B
[J]. PHYSICAL REVIEW, 1954, 96 (01): : 223 - 224
[4] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS
DRESSELHAUS, G
KIP, AF
KITTEL, C
[J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384
[5] MASS SPECTROGRAPHIC ANALYSIS OF SOLIDS
HANNAY, NB
AHEARN, AJ
[J]. ANALYTICAL CHEMISTRY, 1954, 26 (06) : 1056 - 1058
[6] RADIOACTIVATION ANALYSIS OF PHOSPHORUS IN SILICON
JAMES, JA
RICHARDS, DH
[J]. NATURE, 1955, 176 (4491) : 1026 - 1026
[7] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON
MORIN, FJ
MAITA, JP
[J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35