ELECTRICAL CONDUCTION IN P-TYPE INSB BETWEEN 100-DEGREES AND 2-DEGREES-K

被引：38

作者：

PUTLEY, EH

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1959年 / 73卷 / 469期

关键词：

D O I：

10.1088/0370-1328/73/1/424

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：128 / 131

页数：4

共 7 条

[1] ELECTRICAL PROPERTIES OF P-TYPE INDIUM ANTIMONIDE AT LOW TEMPERATURES
FRITZSCHE, H
LARKHOROVITZ, K
[J]. PHYSICAL REVIEW, 1955, 99 (02): : 400 - 405
[2] HALL EFFECT AND CONDUCTIVITY OF INSB
HROSTOWSKI, HJ
MORIN, FJ
GEBALLE, TH
WHEATLEY, GH
[J]. PHYSICAL REVIEW, 1955, 100 (06): : 1672 - 1676
[3] HULME KF, 1957, J ELECTRON CONTR, V3, P160
[4] KOHN W, 1957, SOLID STATE PHYS, V5, P527
[5] MITCHELL WH, J SCI INSTRUM
[6] THE TEMPERATURE VARIATION OF THE CONCENTRATION OF IMPURITY CARRIERS IN SILICON
PUTLEY, EH
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (467): : 917 - 920
[7] THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF SILICON
PUTLEY, EH
MITCHELL, WH
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (464): : 193 - 200