PICOSECOND HOLOGRAPHIC DIAGNOSTIC OF LIGHT-PULSE ABSORPTION IN SEMICONDUCTORS

被引：2

作者：

BUGAEV, AA

ZAKHARCHENYA, BP

机构：

[1] Acad of Sciences of the USSR, Russia

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1988年 / 150卷 / 02期

关键词：

Interferometry; Holographic - Light--Nonlinear Optical Effects - Semiconducting Gallium Arsenide--Optical Properties - Semiconducting Silicon--Optical Properties;

D O I：

10.1002/pssb.2221500284

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of using picosecond holographic interferometry in traditional excite-and-probe technique for the study of light pulse absorption in semiconductors are presented. The method allows to record the two-dimensional distribution of transient light-induced refractive index in a volume of the semiconductors which corresponds to the known time-delay between exciting and probing of pulses. The distribution obtained is compared with calculations based on Drude's relation and the solution of the system of equations describes the process of single (Si)- or two-photon (GaAs) light pulse absorption. As a result it is possible to determine either some nonlinear parameters of semiconductor or parameters of the exciting pulse.

引用

页码：891 / 894

页数：4

共 7 条

[1] PICOSECOND SPECTROSCOPY OF SEMICONDUCTORS [J].