2-DIMENSIONAL SI CRYSTAL-GROWTH DURING THERMAL ANNEALING OF AU POLYCRYSTALLINE-SI BILAYERS

被引:16
作者
ALLEN, LH [1 ]
PHILLIPS, JR [1 ]
THEODORE, D [1 ]
CARTER, CB [1 ]
SOAVE, R [1 ]
MAYER, JW [1 ]
OTTAVIANI, G [1 ]
机构
[1] UNIV MODENA,DEPT PHYS,I-41100 MODENA,ITALY
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 12期
关键词
D O I
10.1103/PhysRevB.41.8203
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Interactions between Au and polysilicon (where polysilicon denotes polycrystalline Si) thin films during thermal annealing at temperatures below 300°C produce large-grain Si crystals (c-Si). Si is transported from the fine-grain polysilicon laterally through the Au layer to form large (400-m2) plate-like-shaped single crystals of Si of thickness equal to that of the Au layer. The Si crystals displace the Au in the original Au layer and at the same time the Au penetrates into the polysilicon. X-ray diffraction data indicate that the Si crystals have the same preferred orientation (110) as the initial polysilicon film. The driving force for this transformation is the reduction of the interface energy at the grain boundaries of the polysilicon. It is concluded that the large grains from the polysilicon layer grow at the expense of the smaller grains. © 1990 The American Physical Society.
引用
收藏
页码:8203 / 8212
页数:10
相关论文
共 22 条
[1]  
Allen L. K., UNPUB
[2]   KINETIC-STUDY OF SI RECRYSTALLIZATION IN THE REACTION BETWEEN AU AND POLYCRYSTALLINE-SI FILMS [J].
ALLEN, LH ;
MAYER, JW ;
TU, KN ;
FELDMAN, LC .
PHYSICAL REVIEW B, 1990, 41 (12) :8213-8220
[3]  
[Anonymous], 1993, ELEMENTS XRAY DIFFRA
[4]   SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].
CSEPREGI, L ;
KENNEDY, EF ;
MAYER, JW ;
SIGMON, TW .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911
[5]  
GROVENOR CRM, 1984, MAT RES SOC S P, V25, P305
[6]  
HERD SR, 1972, J NONCRYSTAL SOLIDS, V7, P309, DOI DOI 10.1016/0022-3093(72)90267-0
[7]  
Kamins T., 1988, POLYCRYSTALLINE SILI
[8]  
LAU SS, 1978, THIN FILMS INTERDIFF, pCH12
[9]  
LAU SS, 1980, HDB SEMICONDUCTORS, V3, pCH8
[10]   LARGE-AREA UNIFORM GROWTH OF (100) SI THROUGH AL FILM BY SOLID EPITAXY [J].
MAJNI, G ;
OTTAVIANI, G .
APPLIED PHYSICS LETTERS, 1977, 31 (02) :125-126