ELECTRONIC BASIS OF SWITCHING IN AMORPHOUS SEMICONDUCTOR ALLOYS

被引:48
作者
VANROOSBROECK, W
机构
关键词
D O I
10.1103/PhysRevLett.28.1120
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1120 / +
页数:1
相关论文
共 31 条
[1]   BREAKDOWN AND SUSTAINING MECHANISM IN AMORPHOUS SEMICONDUCTING THRESHOLD SWITCHES [J].
ARMITAGE, D ;
BRODIE, DE ;
EASTMAN, PC .
CANADIAN JOURNAL OF PHYSICS, 1971, 49 (12) :1662-&
[2]   FIELD DEPENDENT MOBILITY OF LOCALIZED ELECTRONIC CARRIERS [J].
BAGLEY, BG .
SOLID STATE COMMUNICATIONS, 1970, 8 (05) :345-&
[3]   ELECTRO-THERMAL EFFECTS IN OVONICS [J].
BOER, KW .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 4 (03) :571-&
[4]   SEMICONDUCTIVITY OF GLASSES [J].
BOER, KW ;
HAISLIP, R .
PHYSICAL REVIEW LETTERS, 1970, 24 (05) :230-&
[5]  
BOER KW, 1970, J APPL PHYS, V41, P2675, DOI 10.1063/1.1659281
[6]   SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J].
COHEN, MH ;
FRITZSCHE, H ;
OVSHINSKY, SR .
PHYSICAL REVIEW LETTERS, 1969, 22 (20) :1065-+
[7]   MEASUREMENTS OF FIELD EFFECT IN AMORPHOUS SWITCHING MATERIALS [J].
EGERTON, RF .
APPLIED PHYSICS LETTERS, 1971, 19 (06) :203-&
[8]   PHOTOLUMINESCENCE OF AMORPHOUS 2AS2TE3.AS2SE3 FILMS [J].
FISCHER, R ;
HEIM, U ;
STERN, F ;
WEISER, K .
PHYSICAL REVIEW LETTERS, 1971, 26 (19) :1182-&
[9]  
Fritzsche H., 1970, Journal of Non-Crystalline Solids, V4, P464, DOI 10.1016/0022-3093(70)90082-7
[10]  
Fritzsche H., 1971, Journal of Non-Crystalline Solids, V6, P49, DOI 10.1016/0022-3093(71)90015-9