PHOTOACOUSTIC AND PHOTOTHERMAL DEFLECTION SPECTROSCOPY OF SEMICONDUCTORS

被引:5
作者
AMATO, G [1 ]
BENEDETTO, G [1 ]
BOARINO, L [1 ]
MARINGELLI, M [1 ]
SPAGNOLO, R [1 ]
机构
[1] UNIV TURIN,DIPARTIMENTO FIS SPERIMENTALE,I-10125 TURIN,ITALY
来源
IEE PROCEEDINGS-A-SCIENCE MEASUREMENT AND TECHNOLOGY | 1992年 / 139卷 / 04期
关键词
DEFLECTION SPECTROSCOPY; PHOTOACOUSTIC METHODS; PHOTOTHERMAL METHODS; SEMICONDUCTORS; LIGHT ABSORPTION MEASUREMENTS;
D O I
10.1049/ip-a-3.1992.0027
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In recent years, photothermal techniques have been widely used for the determination of light absorption spectra of semiconductors, the main reason being the possibility of successfully measuring the weak absorption in the subgap region. The paper presents and discusses the most relevant applications, particularly in the field of thin films of amorphous semiconductors.
引用
收藏
页码:161 / 168
页数:8
相关论文
共 24 条
[1]  
AMATO G, 1990, MATER RES SOC SYMP P, V192, P207, DOI 10.1557/PROC-192-207
[2]   INFLUENCE OF SUBSTRATE IN PHOTOTHERMAL MEASUREMENTS OF THIN-FILM ABSORPTION [J].
AMATO, G ;
BENEDETTO, G ;
BOARINO, L ;
MARINGELLI, M ;
SPAGNOLO, R .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 52 (04) :280-284
[3]  
Amato G., 1991, Tenth E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference, P128
[4]  
AMATO G, 1991, MATER RES SOC SYMP P, V219, P685, DOI 10.1557/PROC-219-685
[5]   PHOTOTHERMAL SUBGAP SPECTRA OF DOPED SILICON-WAFERS [J].
AMATO, G ;
BENEDETTO, G ;
BOARINO, L ;
SPAGNOLO, R ;
TURNATURI, M .
MATERIALS LETTERS, 1991, 12 (04) :257-260
[6]  
AMATO G, 1989, 13TH P ICA C BEOGR, P357
[7]  
AMATO G, 1982, J APPL PHYS, V71, P3479
[8]  
AMER NM, 1984, SEMICONDUCT SEMIMET, V21, P83
[9]   THERMOOPTICAL SPECTROSCOPY - DETECTION BY THE MIRAGE EFFECT [J].
BOCCARA, AC ;
FOURNIER, D ;
BADOZ, J .
APPLIED PHYSICS LETTERS, 1980, 36 (02) :130-132
[10]  
Curtins H., 1988, AMORPHOUS SILICON RE, VA, P329