EFFECT OF DISCHARGE CURRENT ON THE MICROSTRUCTURE OF DIAMOND FILMS DEPOSITED ON ALUMINUM SUBSTRATE AT LOW SUBSTRATE-TEMPERATURE BY DC PLASMA CVD

被引：5

作者：

NAKAO, S ^{[1
]}

NODA, M ^{[1
]}

WATATANI, H ^{[1
]}

MARUNO, S ^{[1
]}

机构：

[1] AICHI UNIV EDUC,DEPT TECHNOL,AICHI 448,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 1A期

关键词：

DIAMOND FILM; DIAMOND DEPOSITION ON AL-SUBSTRATE; DIAMOND DEPOSITION AT LOW SUBSTRATE TEMPERATURE; DC PLASMA CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE OF DIAMOND FILM; MICROCRYSTALLINE DIAMOND CRYSTALS;

D O I：

10.1143/JJAP.30.L45

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of discharge current (I(d)) on the diamond structure has been investigated. The films deposited on A1 substrate at a low substrate temperature (T(s)) of about 200-degrees-C by DC plasma CVD are composed of ball-like grains containing microcrystalline diamond crystals with a hydrogenated amorphous component. When I(d) increases, the growth rate of the grains and the size of the diamond crystals increase, and the amorphous component decreases. These results show that the increase of I(d) enhances the diamond structure formation, in addition to the T(s) factor's well known effect on the formation of a definite diamond film.

引用

页码：L45 / L48

页数：4

共 13 条

[11] GROWTH OF DIAMOND FILMS AT LOW-PRESSURE USING MAGNETOMICROWAVE PLASMA CVD [J].