THERMAL-DECOMPOSITION OF GERMANE

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511

[2] EPITAXIAL GROWTH OF MIRROR SMOOTH GE ON GAAS AND GE BY LOW TEMPERATURE GEL2 DISPROPORTIONATION REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 966 - &

[3] Germanium. VIII. The physical properties of monogermane [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1925, 47 : 112 - 117

[4] EPITAXIAL GROWTH OF GERMANIUM ON SINGLE CRYSTAL SPINEL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 749 - &

[5] HALL L, UNPUBLISHED RESULTS

[6] HOGNESS TR, 1933, J AM CHEM SOC, V54, P3583

[7] PYROMETRIC MEASUREMENTS OF SI GE AND GAAS WAFERS BETWEEN 100 DEGREES AND 700 DEGREES C [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3637 - &

[8] EPITAXIAL DEPOSITION OF GERMANIUM ONTO SEMI-INSULATING GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 961 - &

[9] KINETICS OF REACTION HI-[3] GE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) : 146 - &

[10] THE THERMAL DECOMPOSITION OF GERMANE .1. KINETICS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1955, 59 (09) : 801 - 805

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511

[2] EPITAXIAL GROWTH OF MIRROR SMOOTH GE ON GAAS AND GE BY LOW TEMPERATURE GEL2 DISPROPORTIONATION REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 966 - &

[3] Germanium. VIII. The physical properties of monogermane [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1925, 47 : 112 - 117

[4] EPITAXIAL GROWTH OF GERMANIUM ON SINGLE CRYSTAL SPINEL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 749 - &

[5] HALL L, UNPUBLISHED RESULTS

[6] HOGNESS TR, 1933, J AM CHEM SOC, V54, P3583

[7] PYROMETRIC MEASUREMENTS OF SI GE AND GAAS WAFERS BETWEEN 100 DEGREES AND 700 DEGREES C [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3637 - &

[8] EPITAXIAL DEPOSITION OF GERMANIUM ONTO SEMI-INSULATING GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 961 - &

[9] KINETICS OF REACTION HI-[3] GE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) : 146 - &

[10] THE THERMAL DECOMPOSITION OF GERMANE .1. KINETICS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1955, 59 (09) : 801 - 805