1ST-PRINCIPLES STUDY OF ZN-STABILIZED AND SE-STABILIZED ZNSE(100) SURFACE RECONSTRUCTIONS

被引:38
作者
GARCIA, A
NORTHRUP, JE
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 04期
关键词
D O I
10.1116/1.587230
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have carried out first-principles pseudopotential calculations to study the formation energies of various ZnSe(100) surface reconstructions. Both Zn- and Se-terminated models are treated, using as a guide the satisfaction of the electron counting rule (i.e., charge compensation at the surface by the filling of all the Se dangling bonds and the emptying of the Zn dangling bonds). In order to treat structures with different stoichiometries, we determine the surface energy as a function of the Zn chemical potential, which is allowed to vary in a range determined by the energies of bulk Zn, Se, and ZnSe. A c(2 X 2) reconstruction with half-monolayer coverage of twofold coordinated Zn atoms is stable in the Zn-rich limit. Under moderately Se-rich conditions, the surface adopts a (2 X 1) Se-dimer phase. In the extreme Se-rich limit we predict the stability of a reconstruction with one and a half monolayer coverage of Se. The new structure can account for the high growth rates observed in atomic layer epitaxy and migration enhanced epitaxy experiments at relatively low temperatures.
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页码:2678 / 2683
页数:6
相关论文
共 18 条
[1]   RAMAN STUDIES OF THE GROWTH-MECHANISM OF ZNSE/GAAS(001) HETEROSTRUCTURES [J].
BAUER, S ;
BERGER, H ;
LINK, P ;
GEBHARDT, W .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (06) :3916-3920
[2]  
BIEGELSEN DK, COMMUNICATION
[3]   ZNSE(100) - THE SURFACE AND THE FORMATION OF SCHOTTKY BARRIERS WITH AL AND AU [J].
CHEN, W ;
KAHN, A ;
SOUKIASSIAN, P ;
MANGAT, PS ;
GAINES, J ;
PONZONI, C ;
OLEGO, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2639-2645
[4]  
CHEN W, IN PRESS PHYS REV B
[5]   CALCULATIONS OF THE STRUCTURAL-PROPERTIES OF CUBIC ZINC-SULFIDE [J].
ENGEL, GE ;
NEEDS, RJ .
PHYSICAL REVIEW B, 1990, 41 (11) :7876-7878
[6]   THE STRUCTURE OF THE ZNSE(100)C(2X2) SURFACE [J].
FARRELL, HH ;
TAMARGO, MC ;
SHIBLI, SM ;
CHANG, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :884-887
[7]   STRUCTURAL-PROPERTIES OF ZNSE FILMS GROWN BY MIGRATION ENHANCED EPITAXY [J].
GAINES, JM ;
PETRUZZELLO, J ;
GREENBERG, B .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (06) :2835-2840
[8]   BEATING IN RHEED OSCILLATIONS OBSERVED DURING MEE GROWTH OF ZNSE [J].
GAINES, JM ;
PONZONI, CA .
SURFACE SCIENCE, 1993, 290 (1-2) :172-178
[9]   EFFECT OF GA 3D STATES ON THE STRUCTURAL-PROPERTIES OF GAAS AND GAP [J].
GARCIA, A ;
COHEN, ML .
PHYSICAL REVIEW B, 1993, 47 (11) :6751-6754
[10]   SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS [J].
KOHN, W ;
SHAM, LJ .
PHYSICAL REVIEW, 1965, 140 (4A) :1133-&