THE STRUCTURE OF THE ZNSE(100)C(2X2) SURFACE

被引：36

作者：

FARRELL, HH ^{[1
]}

TAMARGO, MC ^{[1
]}

SHIBLI, SM ^{[1
]}

CHANG, Y ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53589

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584982

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：884 / 887

页数：4

共 10 条

[1] CHANG YH, IN PRESS
[2] CHO AY, 1979, J APPL PHYS, V47, P2074
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FARRELL, HH
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05): : 1482 - 1489
[4] MOLECULAR-BEAM EPITAXY AND ATOMIC-LAYER EPITAXY GROWTH MECHANISMS FOR ZNSE(100)
FARRELL, HH
TAMARGO, MC
DEMIGUEL, JL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 767 - 768
[5] FARRELL HH, IN PRESS
[6] POLAR HETEROJUNCTION INTERFACES
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[7] ELECTRONIC PASSIVATION OF GAAS-SURFACES THROUGH THE FORMATION OF ARSENIC SULFUR BONDS
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CHANG, CC
HARBISON, JP
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (04) : 362 - 364
[8] STRUCTURAL CHARACTERIZATION OF GAAS/ZNSE INTERFACES
TAMARGO, MC
DEMIGUEL, JL
HWANG, DM
FARRELL, HH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 784 - 787
[9] TAMARGO MC, 1989, GROWTH OPTICAL PROPE
[10] TAMARGO MC, 1988, MATER RES SOC S P, V102, P125