STRUCTURAL CHARACTERIZATION OF GAAS/ZNSE INTERFACES

被引：99

作者：

TAMARGO, MC

DEMIGUEL, JL

HWANG, DM

FARRELL, HH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：784 / 787

页数：4

共 6 条

[1] MOLECULAR-BEAM EPITAXY AND ATOMIC-LAYER EPITAXY GROWTH MECHANISMS FOR ZNSE(100)
FARRELL, HH
TAMARGO, MC
DEMIGUEL, JL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 767 - 768
[2] NUCLEATION AND CHARACTERIZATION OF PSEUDOMORPHIC ZNSE GROWN ON MOLECULAR-BEAM EPITAXIALLY GROWN GAAS EPILAYERS
GUNSHOR, RL
KOLODZIEJSKI, LA
MELLOCH, MR
VAZIRI, M
CHOI, C
OTSUKA, N
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 200 - 202
[3] MOLECULAR-BEAM EPITAXIAL-GROWTH MECHANISMS ON THE GAAS(100) SURFACE
HARBISON, JP
FARRELL, HH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 733 - 735
[4] EFFECT OF LATTICE MISMATCH IN ZNSE EPILAYERS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY
MOHAMMED, K
CAMMACK, DA
DALBY, R
NEWBURY, P
GREENBERG, BL
PETRUZELLO, J
BHARGAVA, RN
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 37 - 39
[5] ZNSE-GAAS AND SE-GAAS INTERFACES
TU, DW
KAHN, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 922 - 925
[6] YAO T, TECHNOLOGY PHYSICS M, P313