ZNSE-GAAS AND SE-GAAS INTERFACES

被引：74

作者：

TU, DW

KAHN, A

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573350

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：922 / 925

页数：4

共 20 条

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[7] MEASUREMENT OF ZNSE-GAAS(110) AND ZNSE-GE(110) HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS)
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[8] BAND DISCONTINUITIES AND INTERFACE FERMI-LEVEL POSITIONS IN GE-GAAS(110) HETEROJUNCTIONS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 684 - 686
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