OPTICAL-PROPERTIES OF EPITAXIAL COSI2 AND NISI2 FILMS ON SILICON

被引：29

作者：

JIMENEZ, JR

WU, ZC

SCHOWALTER, LJ

HUNT, BD

FATHAUER, RW

GRUNTHANER, PJ

LIN, TL

机构：

[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180

[2] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301

[3] CALTECH,JET PROP LAB,PASADENA,CA 91109

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 06期

关键词：

D O I：

10.1063/1.344217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2738 / 2741

页数：4

共 11 条

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[8] ROOM-TEMPERATURE CODEPOSITION GROWTH TECHNIQUE FOR PINHOLE REDUCTION IN EPITAXIAL COSI2 ON SI (111) [J].

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