ELECTRONIC-STRUCTURE AND PROPERTIES OF COSI2

被引：103

作者：

MATTHEISS, LF

HAMANN, DR

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.37.10623

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10623 / 10627

页数：5

共 31 条

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[8] SCHOTTKY-BARRIER HEIGHT MEASUREMENTS OF EPITAXIAL NISI2 ON SI [J].

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[9] ELECTRICAL TRANSPORT-PROPERTIES OF COSI2 AND NISI2 THIN-FILMS [J].

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