SI-METAL INTERFACE REACTION AND BULK ELECTRONIC-STRUCTURE OF SILICIDES

被引：18

作者：

FRANCIOSI, A

WEAVER, JH

机构：

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90671-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：846 / 847

页数：2

共 13 条

[1] TRANSITION-METAL SILICIDES - ASPECTS OF THE CHEMICAL-BOND AND TRENDS IN THE ELECTRONIC-STRUCTURE [J].

BISI, O ;

CALANDRA, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (35) :5479-5494

[2] ELECTRONIC-STRUCTURE OF VANADIUM SILICIDES [J].

BISI, O ;

CHIAO, LW .

PHYSICAL REVIEW B, 1982, 25 (08) :4943-4948

[3]

BRILLSON LJ, STRUCTURE PROPERTIES

[4] STRUCTURAL MORPHOLOGY AND ELECTRONIC-PROPERTIES OF THE SI-CR INTERFACE [J].

FRANCIOSI, A ;

PETERMAN, DJ ;

WEAVER, JH ;

MORUZZI, VL .

PHYSICAL REVIEW B, 1982, 25 (08) :4981-4993

[5] CHEMICAL BONDING AT THE SI-METAL INTERFACE - SI-NI AND SI-CR [J].

FRANCIOSI, A ;

WEAVER, JH ;

ONEILL, DG ;

CHABAL, Y ;

ROWE, JE ;

POATE, JM ;

BISI, O ;

CALANDRA, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :624-627

[6] SILICON-REFRACTORY METAL INTERFACES - EVIDENCE OF ROOM-TEMPERATURE INTERMIXING FOR SI-CR [J].

FRANCIOSI, A ;

PETERMAN, DJ ;

WEAVER, JH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :657-660

[7]

FRANCIOSI A, UNPUB

[8] INTERFACE METALLURGY AND ELECTRONIC-PROPERTIES OF SILICIDES [J].

OTTAVIANI, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :924-928

[9] BARRIER HEIGHTS AND SILICIDE FORMATION FOR NI, PD, AND PT ON SILICON [J].

OTTAVIANI, G ;

TU, KN ;

MAYER, JW .

PHYSICAL REVIEW B, 1981, 24 (06) :3354-3359

[10]

OTTAVIANI G, 1979, J VAC SCI TECHNOL, V16, P112

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