BARRIER HEIGHTS AND SILICIDE FORMATION FOR NI, PD, AND PT ON SILICON

被引：117

作者：

OTTAVIANI, G

TU, KN

MAYER, JW

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] CORNELL UNIV,DEPT MAT SCI,ITHACA,NY 14853

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.24.3354

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3354 / 3359

页数：6

共 28 条

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