SILICIDE INTERFACE STOICHIOMETRY

被引：48

作者：

FREEOUF, JL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.570993

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：910 / 916

页数：7

共 43 条

[1]

ABBATI I, 1979, NOV P TOP C PHYS SEM

[2] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].

ANDREWS, JM ;

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59

[3] OBSERVATIONS OF STRESSES IN THIN-FILMS OF PALLADIUM AND PLATINUM SILICIDES ON SILICON [J].

ANGILELLO, J ;

HEURLE, FD ;

PETERSON, S ;

SEGMULLER, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :471-475

[4]

[Anonymous], 1958, HDB LATTICE SPACINGS

[5]

BENE RW, 1980, 7TH P ANN C PHYS COM

[6] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].

BRILLSON, LJ .

PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263

[7] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].

BRILLSON, LJ ;

BACHRACH, RZ ;

BAUER, RS ;

MCMENAMIN, J .

PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401

[8] FREE ENERGY OF A NONUNIFORM SYSTEM .1. INTERFACIAL FREE ENERGY [J].

CAHN, JW ;

HILLIARD, JE .

JOURNAL OF CHEMICAL PHYSICS, 1958, 28 (02) :258-267

[9]

CHEUNG NW, UNPUBLISHED

[10] INTERFACIAL ORDER IN EPITAXIAL NISI2 [J].

CHIU, KCR ;

POATE, JM ;

FELDMAN, LC ;

DOHERTY, CJ .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :544-547

← 1 2 3 4 5 →