SILICIDE INTERFACE STOICHIOMETRY

被引：48

作者：

FREEOUF, JL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.570993

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：910 / 916

页数：7

共 43 条

[21]

HO PT, UNPUBLISHED

[22] NEW PHENOMENA IN SCHOTTKY-BARRIER FORMATION ON III-V-COMPOUNDS [J].

LINDAU, I ;

CHYE, PW ;

GARNER, CM ;

PIANETTA, P ;

SU, CY ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1332-1339

[23] ELECTRONIC-STRUCTURE OF A METAL-SEMICONDUCTOR INTERFACE [J].

LOUIE, SG ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 13 (06) :2461-2469

[24] SURFACE SPECTROSCOPY OF SCHOTTKY-BARRIER FORMATION ON SI(111) 7X7 - PHOTOEMISSION STUDIES OF FILLED SURFACE-STATES AND BAND BENDING [J].

MARGARITONDO, G ;

ROWE, JE ;

CHRISTMAN, SB .

PHYSICAL REVIEW B, 1976, 14 (12) :5396-5403

[25] PHENOMENOLOGY OF METAL-SEMICONDUCTOR ELECTRICAL BARRIERS [J].

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :935-942

[26]

MILLER JN, 1980, 7TH P ANN C PHYS COM

[27] PREDICTION OF FERMI ENERGIES AND PHOTOELECTRIC THRESHOLDS BASED ON ELECTRONEGATIVITY CONCEPTS [J].

NETHERCOT, AH .

PHYSICAL REVIEW LETTERS, 1974, 33 (18) :1088-1091

[28]

NYLUND A, 1966, ACTA CHEM SCAND, V20, P238

[29]

OELHAFEN P, 1979, SOLID STATE COMMUN, V30, P641, DOI 10.1016/0038-1098(79)90113-3

[30] INTERFACIAL REACTION AND SCHOTTKY-BARRIER IN METAL-SILICON SYSTEMS [J].

OTTAVIANI, G ;

TU, KN ;

MAYER, JW .

PHYSICAL REVIEW LETTERS, 1980, 44 (04) :284-287

← 1 2 3 4 5 →