BARRIER HEIGHTS AND SILICIDE FORMATION FOR NI, PD, AND PT ON SILICON

被引：117

作者：

OTTAVIANI, G

TU, KN

MAYER, JW

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] CORNELL UNIV,DEPT MAT SCI,ITHACA,NY 14853

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.24.3354

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3354 / 3359

页数：6

共 28 条

[21]

Rhoderick E.H., 1978, METAL SEMICONDUCTORS

ROTH, JA ;

CROWELL, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1317-1324

[23] For the theory of semiconductor junction and peak rectifier . [J].

Schottky, W. .

ZEITSCHRIFT FUR PHYSIK, 1939, 113 (5-6) :367-414

[24]

Schwartz B, 1969, OHMIC CONTACT SEMICO

[25] BARRIER HEIGHT OF RE AND OS CONTACTS TO N-SILICON [J].

SMIRNOV, A ;

TOVE, PA ;

SOUSAPIRES, JD ;

NORDE, H .

[26] CONTACTS BETWEEN SIMPLE METALS AND ATOMICALLY CLEAN SILICON [J].

THANAILAKIS, A .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (05) :655-668

[27]

Tu K. N., 1978, THIN FILMS INTERDIFF

VANGURP, GJ .