COBALT SILICIDE LAYERS ON SI .2. SCHOTTKY-BARRIER HEIGHT AND CONTACT RESISTIVITY

被引：41

作者：

VANGURP, GJ ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

关键词：

D O I：

10.1063/1.321452

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4308 / 4311

页数：4

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[8]

SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH8

[9] COBALT SILICIDE LAYERS ON SI .1. STRUCTURE AND GROWTH [J].

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[10] CHARACTERISTICS OF ALUMINUM-SILICON SCHOTTKY BARRIER DIODE [J].

YU, AYC ;

MEAD, CA .