STUDIES OF FORMATION OF SILICIDES AND THEIR BARRIER HEIGHTS TO SILICON

被引：54

作者：

SUNDSTROM, KE ^{[1
]}

PETERSSON, S ^{[1
]}

TOVE, PA ^{[1
]}

机构：

[1] UNIV UPPSALA, INST TECHNOL, ELECTR DEPT, UPPSALA, SWEDEN

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1973年 / 20卷 / 02期

关键词：

D O I：

10.1002/pssa.2210200228

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：653 / 668

页数：16

共 28 条

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[9] METAL SEMICONDUCTOR CONTACT BARRIERS OF METALS IN GROUP-1B AND GROUP-8 ON SILICON AND GERMANIUM [J].

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[10] ANALYSIS OF FORMATION OF HAFNIUM SILICIDE ON SILICON [J].

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APPLIED PHYSICS LETTERS, 1973, 22 (02) :81-83

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