METAL SEMICONDUCTOR CONTACT BARRIERS OF METALS IN GROUP-1B AND GROUP-8 ON SILICON AND GERMANIUM

被引：23

作者：

JAGER, H

KOSAK, W

机构：

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 07期

关键词：

D O I：

10.1016/0038-1101(69)90106-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：511 / &

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