GOLD-EPITAXIAL SILICON HIGH-FREQUENCY DIODES

[1] BETHE HA, 1942, 1 MIT RAD LAB REP

[2] DIETRICH AF, 1961, P IRE, V49, P972

[3] HENISCH HK, 1957, RECTIFYING SEMICONDU, P229

[4] CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER [J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 281 - 295

[5] ANOMALOUS IMPURITY DIFFUSION IN EPITAXIAL SILICON NEAR THE SUBSTRATE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1106 - 1108

[6] LEE CA, TO BE PUBLISHED

[7] DETERMINATION OF AVALANCHE BREAKDOWN IN PN JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1613 - 1614

[8] SCHARFETTER DL, 1963, IREAIEE SOLID STATE

[9] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) : 649 - 653

[10] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1055 - 1061

[1] BETHE HA, 1942, 1 MIT RAD LAB REP

[2] DIETRICH AF, 1961, P IRE, V49, P972

[3] HENISCH HK, 1957, RECTIFYING SEMICONDU, P229

[4] CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER [J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 281 - 295

[5] ANOMALOUS IMPURITY DIFFUSION IN EPITAXIAL SILICON NEAR THE SUBSTRATE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1106 - 1108

[6] LEE CA, TO BE PUBLISHED

[7] DETERMINATION OF AVALANCHE BREAKDOWN IN PN JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1613 - 1614

[8] SCHARFETTER DL, 1963, IREAIEE SOLID STATE

[9] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) : 649 - 653

[10] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1055 - 1061