BARRIER HEIGHT OF RE AND OS CONTACTS TO N-SILICON

被引：8

作者：

SMIRNOV, A

TOVE, PA

SOUSAPIRES, JD

NORDE, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 04期

关键词：

D O I：

10.1063/1.91475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：313 / 315

页数：3

共 20 条

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[9] SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDE [J].

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