DETERMINATION OF HAFNIUM-P-TYPE SILICON SCHOTTKY-BARRIER HEIGHT

被引：21

作者：

BEGUWALA, M ^{[1
]}

CROWELL, CR ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT ELECT ENGN & MAT SCI,UNIV PK,LOS ANGELES,CA 90007

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 06期

关键词：

D O I：

10.1063/1.1663673

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2792 / 2794

页数：3

共 11 条

[1]

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[2]

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[6] SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES [J].

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LABATE, EE .

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[7] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

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[8] CONVENIENT OPERATIONAL EQUIVALENT TO FOWLER PHOTOTHRESHOLD PLOT [J].

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SURFACE SCIENCE, 1972, 32 (03) :591-&

[9] ANALYSIS OF FORMATION OF HAFNIUM SILICIDE ON SILICON [J].

KIRCHER, CJ ;

MAYER, JW ;

TU, KN ;

ZIEGLER, JF .

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[10] HAFNIUM-SILICON SCHOTTKY BARRIERS - LARGE BARRIER HEIGHT ON PARA-TYPE SILICON AND OHMIC BEHAVIOR ON TYPE SILICON [J].

SAXENA, AN .

APPLIED PHYSICS LETTERS, 1971, 19 (03) :71-+

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