HAFNIUM-SILICON SCHOTTKY BARRIERS - LARGE BARRIER HEIGHT ON PARA-TYPE SILICON AND OHMIC BEHAVIOR ON TYPE SILICON

被引：20

作者：

SAXENA, AN

机构：

来源：

关键词：

D O I：

10.1063/1.1653826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：71 / +

页数：1

共 17 条

ANDREWS, JM ;

LEPSELTER, MP .

[2]

[Anonymous], 1957, RECTIFYING SEMICONDU

[3] CARRIER TRANSPORT ACROSS METAL-SEMICONDUCTOR BARRIERS [J].

CHANG, CY ;

SZE, SM .

[4]

KAWAMURA M, 1970, INT ELECTRON DEVICES

LEPSELTE.MP ;

SZE, SM .

BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (02) :195-+

[6]

Mead C. A., 1963, J APPL PHYS, V34, P3061

[7] METAL-SEMICONDUCTOR SURFACE BARRIERS [J].

MEAD, CA .

[8] FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES [J].

MEAD, CA ;

SPITZER, WG .

[9]

MOORE GE, 1963, MICROELECTRONICS

[10]

NOYCE RN, 1969, ELECTRONICS-US, V42, P74