SILICON-REFRACTORY METAL INTERFACES - EVIDENCE OF ROOM-TEMPERATURE INTERMIXING FOR SI-CR

被引:35
作者
FRANCIOSI, A
PETERMAN, DJ
WEAVER, JH
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期
关键词
D O I
10.1116/1.571080
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:657 / 660
页数:4
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共 39 条
  • [1] ELECTRONIC-STRUCTURE OF COMPOUNDS AT PLATINUM - SILICON (III) INTERFACE
    ABBATI, I
    BRAICOVICH, L
    DEMICHELIS, B
    BISI, O
    ROVETTA, R
    [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (02) : 119 - 122
  • [2] EVIDENCE OF INTERMIXING AT SI(III)-AU INTERFACE AT LIQUID-NITROGEN TEMPERATURE
    ABBATI, I
    BRAICOVICH, L
    FRANCIOSI, A
    [J]. PHYSICS LETTERS A, 1980, 80 (01) : 69 - 71
  • [3] PHOTOEMISSION INVESTIGATION OF THE TEMPERATURE EFFECT ON SI-AU INTERFACES
    ABBATI, I
    BRAICOVICH, L
    FRANCIOSI, A
    LINDAU, I
    SKEATH, PR
    SU, CY
    SPICER, WE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 930 - 935
  • [4] ABBATI I, UNPUBLISHED
  • [5] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES
    ANDREWS, JM
    PHILLIPS, JC
    [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59
  • [6] VALENCE BAND FORMATION IN SMALL SILVER CLUSTERS
    APAI, G
    LEE, ST
    MASON, MG
    [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (03) : 213 - 217
  • [7] 3P-3D INTERSHELL INTERACTION IN CR
    BARTH, J
    GERKEN, F
    KOBAYASHI, KLI
    WEAVER, JH
    SONNTAG, B
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (07): : 1369 - 1375
  • [8] IS 1ST COMPOUND NUCLEATION AT METAL - SEMICONDUCTOR INTERFACES AN ELECTRONICALLY INDUCED INSTABILITY
    BENE, RW
    WALSER, RM
    LEE, GS
    CHEN, KC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 911 - 915
  • [9] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON
    BOWER, RW
    MAYER, JW
    [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &
  • [10] BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581