CHEMICAL BONDING AT THE SI-METAL INTERFACE - SI-NI AND SI-CR

[1] ABBATI I, 1981, REV VIDE COUCHES M S, V2, P1023

[2] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59

[3] TRANSITION-METAL SILICIDES - ASPECTS OF THE CHEMICAL-BOND AND TRENDS IN THE ELECTRONIC-STRUCTURE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (35): : 5479 - 5494

[4] BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581

[5] CHABAL Y, UNPUB PHYS REV B

[6] STRUCTURAL MORPHOLOGY AND ELECTRONIC-PROPERTIES OF THE SI-CR INTERFACE [J]. PHYSICAL REVIEW B, 1982, 25 (08) : 4981 - 4993

[7] SILICON-REFRACTORY METAL INTERFACES - EVIDENCE OF ROOM-TEMPERATURE INTERMIXING FOR SI-CR [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 657 - 660

[8] FRANCIOSI A, UNPUB PHYS REV B

[9] FRANCIOSI A, UNPUB

[10] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (24) : 1836 - 1839

[1] ABBATI I, 1981, REV VIDE COUCHES M S, V2, P1023

[2] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59

[3] TRANSITION-METAL SILICIDES - ASPECTS OF THE CHEMICAL-BOND AND TRENDS IN THE ELECTRONIC-STRUCTURE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (35): : 5479 - 5494

[4] BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581

[5] CHABAL Y, UNPUB PHYS REV B

[6] STRUCTURAL MORPHOLOGY AND ELECTRONIC-PROPERTIES OF THE SI-CR INTERFACE [J]. PHYSICAL REVIEW B, 1982, 25 (08) : 4981 - 4993

[7] SILICON-REFRACTORY METAL INTERFACES - EVIDENCE OF ROOM-TEMPERATURE INTERMIXING FOR SI-CR [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 657 - 660

[8] FRANCIOSI A, UNPUB PHYS REV B

[9] FRANCIOSI A, UNPUB

[10] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (24) : 1836 - 1839