ELECTRONIC-STRUCTURE AND PROPERTIES OF NI-SI(001) AND NI-SI(111) REACTIVE INTERFACES

被引：48

作者：

BISI, O ^{[1
]}

CHIAO, LW ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.30.4664

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4664 / 4674

页数：11

共 48 条

[1] VALENCE PHOTOEMISSION-STUDY OF TEMPERATURE-DEPENDENT REACTION-PRODUCTS IN NI-SI INTERFACES AND THIN-FILMS
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[J]. SOLID STATE COMMUNICATIONS, 1982, 43 (03) : 199 - 202
[2] ABBATI I, 1980, VIDE CONCHES MINCES, V201, P959
[3] MOLECULAR ORBITAL THEORY FOR OCTAHEDRAL AND TETRAHEDRAL METAL COMPLEXES
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VISTE, A
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[J]. JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (01) : 10 - +
[4] TRANSITION-METAL SILICIDES - ASPECTS OF THE CHEMICAL-BOND AND TRENDS IN THE ELECTRONIC-STRUCTURE
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CALANDRA, C
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (35): : 5479 - 5494
[5] ELECTRONIC-PROPERTIES OF METAL-RICH AU SI COMPOUNDS AND INTERFACES
BISI, O
CALANDRA, C
BRAICOVICH, L
ABBATI, I
ROSSI, G
LINDAU, I
SPICER, WE
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (22): : 4707 - 4716
[6] ELECTRONIC-STRUCTURE OF VANADIUM SILICIDES
BISI, O
CHIAO, LW
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 4943 - 4948
[7] ATOMIC INTERMIXING AND ELECTRONIC INTERACTION AT THE PD-SI(111) INTERFACE
BISI, O
TU, KN
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (18) : 1633 - 1636
[8] Breeze A., 1973, Journal of Non-Crystalline Solids, V13, P140, DOI 10.1016/0022-3093(73)90043-4
[9] SELF-CONSISTENT ENERGY-BANDS AND BONDING OF NISI2
BYLANDER, DM
KLEINMAN, L
MEDNICK, K
GRISE, WR
[J]. PHYSICAL REVIEW B, 1982, 26 (12): : 6379 - 6383
[10] PHOTOEMISSION AND BAND-STRUCTURE RESULTS FOR NISI-2
CHABAL, YJ
HAMANN, DR
ROWE, JE
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1982, 25 (12): : 7598 - 7602

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